? 2009 ixys corporation, all rights reserved n-channel enhancement mode avalanche rated fast intrinsic diode v dss = 500v i d25 = 16a r ds(on) 400m t rr 200ns ds99357f(05/09) ixfa16n50p ixfp16n50p IXFH16N50P symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c16a i dm t c = 25 c, pulse width limited by t jm 35 a i a t c = 25 c16a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss ,t j 150 c 10 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220 & to-247) 1.13 / 10 nmlb.in. f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 2.5ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 15 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 400 m polarhv tm hiperfet power mosfet (tab) to-263 g s (tab) to-220 d g s g = gate d = drain s = source tab = drain to-247 (tab) g d s features z international standard packages z avalanche rated z fast intrinsic diode z low package inductance advantages z high power density z easy to mount z space savings applications z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. ixfa16n50p ixfp16n50p IXFH16N50P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 9 16 s c iss 2480 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 237 pf c rss 18 pf t d(on) 23 ns t r 25 ns t d(off) 70 ns t f 22 ns q g(on) 43 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 15 nc q gd 12 nc r thjc 0.42 c/w r thch (to-220) 0.50 c/w (to-247) 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 16 a i sm repetitive, pulse width limited by t jm 64 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 200 ns i rm 6.0 a q rm 0.6 nc note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = 16a, -di/dt = 100a/ s v r = 100v, v gs = 0v pins: 1 - gate 2 - drain to-220 (ixfp) outline to-263 (ixfa) outline ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2009 ixys corporation, all rights reserved ixfa16n50p ixfp16n50p IXFH16N50P fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 0123456789 v ds - volts i d - amperes v gs = 10v 8v 6v 7v fig. 2. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. r ds(on) normalized to i d = 8a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 16a i d = 8a fig. 4. r ds(on) normalized to i d = 8a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 2 4 6 8 101214161820 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 2 4 6 8 10 12 14 16 18 20 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfa16n50p ixfp16n50p IXFH16N50P fig. 7. transconductance 0 4 8 12 16 20 24 28 0 2 4 6 8 10 12 14 16 18 20 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 250v i d = 8a i g = 10ma fig. 10. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_16n50p(5j-745)5-1-09-c
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